M.Tech (VLSI)
(To be applicable from July
2013-batch onwards)
Semester
I |
|||
Code |
Course
Name |
L–T-P |
Credit |
EE 502 |
Digital IC Design |
3-0-0 |
6 |
EE 511 |
Semiconductor Device Modeling
|
3-0-0 |
6 |
EE 515 |
Semiconductor IC Technology |
3-0-0 |
6 |
EE
5/6xx |
Elective
I |
3-0-0 |
6 |
EE
5/6xx |
Elective
II |
3-0-0 |
6 |
EE 512 |
VLSI Lab I |
0-0-4 |
4 |
|
|
15-0-4 |
34 |
|
|||
Semester
II |
|||
Code |
Course
Name |
L-T-P |
Credit |
EE 503 |
Analog IC Design |
3-0-0 |
6 |
EE 561 |
VLSI System Design |
3-0-0 |
6 |
EE 663 |
VLSI DSP |
3-0-0 |
6 |
EE
5/6xx |
Elective
III |
3-0-0 |
6 |
EE 513 |
VLSI Lab II |
0-0-4 |
4 |
EE 514 |
VLSI Lab III |
0-0-4 |
4 |
|
|
12-0-8 |
32 |
Semester
III |
|||
Code |
Course
Name |
L-T-P |
Credit |
EE 698 |
Project
Phase I |
0-0-24 |
24 |
Semester
IV |
|||
Code |
Course
Name |
L-T-P |
Credit |
EE 699 |
Project
Phase II |
0-0-24 |
24 |
Credits: Course
– 66, Project – 48, Total – 114
Syllabi for M.Tech (VLSI) EE
510 Semiconductor
Device Modeling (3-0-0-6) Preamble: From
computers to communications to internet and video games semiconductor devices
and the technologies have enabled and expanded human experience in a way that
is unique in history. Semiconductor devices have exploited materials, physics
and imaginative applications to spawn new lifestyles. The purpose of this
course is to give the concepts of semiconductor and compound semiconductor
devices in depth. This is important for the device engineers. Course
Contents: p-n
Junctions: equilibrium conditions, forward and reverse-biased junctions,
reverse-bias breakdown, transient and a-c conditions, recombination and generation
in the transition, semiconductor heterojunctions,
Metal-semiconductor junctions: Schottky barriers,
rectifying and Ohmic contacts, Bipolar junction
transistors: minority carrier distribution and terminal currents, generalized
biasing, switching, secondary effects, frequency limitations of transistors, heterojunction bipolar transistors, Field-Effect
Transistors: JFET- current-voltage characteristics, effects in real devices,
high-frequency and high-speed issues, Metal Insulator Semiconductor FET, MOSFET-
basic operation and fabrication; ideal MOS capacitor; effects of real
surfaces; threshold voltages; output and transfer characteristics of MOSFET,
short channel and Narrow width effects, MOSFET scaling, Optoelectronics
Devices: Light emitting diodes, Lasers, Photoconductors, Junction
Photodiodes, Avalanche Photodiodes, Solar Cells, SPICE Models for
Semiconductor Devices: MOSFET Level 1, Level 2 and level 3 model, Model
parameters; SPICE models of p-n diode and BJT. Texts / References:
EE
515
Semiconductor
IC Technology
(3-0-0-6) Preamble: To
provide an overview for semiconductor device fabrication engineers of the
steps and processes required to make integrated circuits from blank silicon
wafers. A course in VLSI semiconductor devices, modern CMOS technology,
crystal growth, fabrication and basic properties of silicon wafers. It will
focus on lithography, thermal oxidation, Si/SiO2 interface, dopant diffusion, ion implantation, thin film deposition,
etching, and back-end technology. Course
Contents: Historical
perspective, processing overview, crystal growth, wafer fabrication and basic
properties of Silicon Wafers, Clean Rooms, Wafer Cleaning, Epitaxy, Thermal Oxidation of Silicon, Lithography, Wet
and Dry Etching, Thin film deposition, Diffusion, Ion Implantation,
Metallization, Process Integration: Passive components, Bipolar Technology,
MOSFET Technology, MESFET Technology, MEMS Technology, IC Manufacturing:
Electrical Testing, Packaging, Yield, Future trends and Challenges:
Challenges for integration, system on chip. Texts / References:
EE
512
VLSI Lab I
(0-0-4-4) Course
Contents: Experiments
are based on the following topics: Model Parameter extraction for a diode and
MOSFET; NMOS and PMOS characteristics; Inverter characteristics; layout of
resistors, capacitors, transistors and inverter; 1-bit Shift Register;
digital logic cells; adders; multipliers; Ring Oscillator Texts/References:
EE
513
VLSI Lab II
(0-0-4-4) Course
Contents: Experiments are based on the following
topics: NMOS and PMOS characteristics; Common source amplifiers; Layout of
resistors, capacitors, transistors; differential amplifier; cascode amplifier; current mirror; push pull CS amplifier;
negative feedback amplifier; multistage amplifiers; operational amplifiers
and comparators Texts/References:
EE
514
VLSI Lab III
(0-0-4-4) Course
Contents: Experiments/Projects are based on the
following topics: RF front-end: LNA, Mixer, VCO, Frequency Synthesizer, Power
Amplifiers and Filters; ADCs, DACs and Digital Compensation techniques; base
band designs: Filters, FFT, DCT, Channel coders and Decoders - Viterbi, Reed Solomon, Turbo Codes; Modulation,
Synchronization and Timing Recovery Circuits; Image/Video compression
techniques. Texts/References:
LIST OF ELECTIVES
FOR MTECH (VLSI)
|