EE 203	Semiconductor Devices	3-0-0-6
Syllabus: Energy Bands and Semiconductors; Charge carriers: Electrons and Holes, Effective Mass, Doping, Fermi Level, Temperature Dependence of Carrier Concentration, Drift and Diffusion of Carriers; Excess Carriers, Recombination, and Life Time; Carrier Transport; PN Junction: Depletion Region, Forward and Reverse Bias, Depletion and Diffusion Capacitances, Switching Characteristics, and Breakdown Mechanisms; Light Emitting Diode, Photodiode, and Solar Cell; Metal-Semiconductor Junctions: Rectifying and Ohmic Contacts; BJT: Carrier Distribution, Current Gain, and Transit Time; MOSFET: MOS Capacitance and Threshold Voltage, C-V and I-V Characteristics, and Body Effect; Introduction to Advanced Devices; Introduction to IC Fabrication Process. Texts/References [1] B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, 7th edition. Pearson, 2015. [2] D. A. Neamen and D. Biswas, Semiconductor Physics and Devices, 4th edition. Tata McGraw-Hill, 2012. [3] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Pearson, 2009. [4] M. S. Tyagi, Introduction to Semiconductor Materials and Devices. Wiley-India, 2008. [5] R. F. Pierret, Semiconductor Device Fundamentals. Pearson, 2006. [6] M. K. Achutan and K. N. Bhat, Fundamentals of Semiconductor Devices. Tata McGraw-Hill, 2006. N. Dasgupta and A. Dasgupta, Semiconductor Devices - Modelling and Technology. PHI Learning, 2004.