PH 205	Semiconductor Devices	3-0-0-6
Syllabus: Energy bands in solids and Charge carriers. Semiconductors: Elemental and compound semiconductors, intrinsic and extrinsic materials, Direct and indirect band-gap semiconductors, Heavily doped semiconductors. Charge carrier in semiconductors: mobility, impurity band conduction, excess carriers in semiconductors. Semiconductor Bloch equation, transport properties. P-N junctions: fabrication, static and dynamic behavior of p-n junction diodes, Junction breakdown in p-n junctions, tunnel diode, Schottky diode. Bipolar Junction Transistor: fundamentals of BJT operation, BJT fabrication, carrier distribution and terminal current, generalized biasing, switches Field Effect Transistors: JFET, MOSFET. Metal Semiconductor junctions: Schottky effect, rectifying and Ohmic contacts. Integrated circuits, fabrication methods. Optoelectronic Devices: photodiodes, light emitting diodes, semiconductor lasers, photovoltaic cells. Texts: 1. S. M. Sze, Physics of Semiconductor devices, 2nd Ed., John Wiley, 1982. 2. M. Shur, Introduction to Electronic Devices, John Wiley, 2000. 3. J. Singh, Semiconductor Devices - Basic Principles, John Wiley, 2001. References: 1. M. S. Tyagi, Introduction to Semiconductor Materials and Devices, John Wiley, 2008. 2. B. G. Streetman, Solid State Electronic Devices, 5th Ed., PHI, 2001.