Dr. Agam Prakash Vajpeyi's page

Dr. Agam Prakash Vajpeyi

Assistant Professor

Department of Physics

Indian Institute of Technology Guwahati

Guwahati - 781 039, Assam, INDIA

e-mail: apvajpeyi@iitg.ernet.in

Phone: +91-361-258-2727 (Off.), 4727 (Res.)

Fax: +91-361-2582749 / 2690762

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ACADEMIC

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RESEARCH

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International Papers :

Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes, Ragh Charash, Hyonju Kim-Chauveau, Agam Vajpeyi, Mahbub Akther, Pleun P. Maaskant, Eric Frayssinet, Philippe de Mierry, Jean-Yves Duboz and Brian Corbett, , Phy. Stat. Solidi 2010 (In Press)

Negative differential resistance in GaN nanowire network, Dragoman M, Konstantinidis G, Cismaru A, Vasilache D, Dinescu A, Dragoman D, Neculoiu D, Buiculescu R, Deligeorgis G , Vajpeyi AP, Georgakilas A, Applied Phys. Lett. 96, 053116 (2010)

Electron Microscopy of InGaN nanopillars spontaneously grown on Si(111) substrate, Th. Kehagias, I. Kerasiotis, A.P. Vajpeyi, I Hausler, W. Neumann, A. Georgakilas, G. P. Dimitrakopulos, and Ph. Kommninou, Phy. Stat. Solidi (2010)

Microstructure of N-face InN grown on (111) substrate by plasma-assisted MBE using a thin GaN / AlN buffer layer, G. P. Dimitrakopulos, Th. Kehagias, A Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A.P. Vajpeyi, A. Georgakilas, Ph. Kommninou and Th. Karakostas, Phy. Stat. Solidi (2010)

InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy, A. P. Vajpeyi, A O Ajagunna, G Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki; A Georgakilas, Nanotechnology 20, 325605 ( 2009)

Effect of substrate temperature on spontaneous GaN nanowires growth and optoelectronic properties, A. P Vajpeyi, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, A. Georgakilas, S.Tripathy, and S. J. Chua, Physica –E 41 (2009)

Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy, A. P. VAJPEYI, A O Ajagunna, G Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki; A Georgakilas, Microelectronics Engineering 86, 812–815 (2009)

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy, Agam Prakash Vajpeyi, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, and Alexandros Georgakilas, Mater. Res. Soc. Symp. Proc. Vol. 1068 –C06-08, 2008

Structural modifications in InP nanostructures prepared by Ar+-ion irradiation, S. K. Mohanta, R. K. Soni, N. N. Gosvami, A. P. Vajpeyi and S. Tripathy, Journal of Applied Physics 102, 074313 (2007)

Effect of carrier density on surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching, A. P. Vajpeyi, S. J. Chua, S. Tripathy, E. A. Fitzgerald, Applied Physics Letter, 91, 083110 (2007)

A. Prakash, Y.T. Kim, K. Uram, K. Davis, G. May, M. Spinelli, B. Nehrer, H. M. Lam, M Lei, S. Chiah, L. Y. Yang, X. F. Yu, H. Xiao, Y. M. Teo, C. K. Leong and S. Lian, Characterization of 90nm SOI SRAM Single Cell Failure by Nano Probing Technique, International Symposium on Integrated Circuit ( I S I C ) 2007

Optical Activation of Eu ions in nanoporous GaN films, A. P. Vajpeyi, S.Tripathy, L.S. Wang, B.C. Foo, S. J. Chua, E.A.Fitzgerald, and E. Alves, Journal of Applied Physics 99,104305 (2006).

Effect of rapid thermal annealing on optical properties of porous GaN prepared by photo assisted electrochemical etching, A. P. Vajpeyi, S. J. Chua, E. A. Fitzgerald, S. Tripathy, S. R. Sannigrahi, B. C. Foo and L. S. Wang, in Electrochemical and solid state letters 9(4), G150-G154, (2006)

Investigation of optical properties of nanoporous GaN films, A. P. Vajpeyi, S.Tripathy, S. J. Chua, E .A. Fitzgerald, Physica -E, Vol. 28, pp 141-149, (2005)

High Optical quality nanoporous GaN prepared by photoassisted electrochemical etching. A. P. Vajpeyi, S. J. Chua, S.Tripathy, E. A. Fitzgerald, W. Liu, P. Chen, and L.S. Wang, Electrochemical and solid state letters Vol. 8, Issue 5, (2005)

A. P. Vaipeyi, S. Tripathy, S. J Chua and J Arokiaraj, Comparative study of optical properties of nanoporous GaN prepared by UV-assisted electrochemical and electroless etching, 207th Electrochemical Society Meeting, Quebec, Canada, May , 2005

Conferences Attended :

A. P. Vajpeyi, G. Tsiakatouras, A. Adikimenakis K. Tsagaraki, M. Androulidaki, and A. Georgakilas, High Optical quality GaN nanopillars grown on (111) Si using molecular beam epitaxy, Materials Research Society spring meeting, San Francisco Marriott, USA, March 24- March 28, 2008.

A. P. Vajpeyi, G. Tsiakatouras, A. Adikimenakis K. Tsagaraki, M. Androulidaki, and A. Georgakilas, Effect of N/Ga flux ratio on morphological and optical properties of GaN nanopillars grown on (111) Si using molecular beam epitaxy, International Conference on Electronic Materials (IUMRS-ICEM), 2008 Hilton Sydney, Australia - 28th July to 1st August 2008

A. O. Ajagunna, A. Vajpeyi, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, and A. Georgakilas, Molecular beam epitaxy of InN directly on Si(111) substrates, International Symposium on Micro and Nano systems, Athens, Greece, 24th Nov-22nd Nov, 2007

A. Prakash, Y.T. Kim, K. Uram, K. Davis, G. May, M. Spinelli, B. Nehrer, H. M. Lam, M Lei, S. Chiah, L. Y. Yang, X. F. Yu, H. Xiao, Y. M. Teo, C. K. Leong and S. Lian, Characterization of 90nm SOI SRAM Single Cell Failure by Nano Probing Technique, International Symposium on Integrated Circuit ( I S I C ) 2007

A. P. Vajpeyi, S. J. Chua and S. Tripathy, Photoluminescence and Micro-Raman Scattering in Porous Si1-xGex Nanostructures. Symposium M: Photonic Materials and Devices. 3rd international conference on Materials for Advanced Technologies (ICMAT), 3 – 8 July 2005, Singapore.

A. P. Vajpeyi, S. J. Chua S. Banerjee and S. Tripathy, Raman study of implantation damage recovery from Er-implanted GaN and AlGaN, E-MRS 2005 (European Materials Research Society meeting), Strasbourg, FRANCE, May 31- June 3, 2005.

A. P. Vaipeyi, S. Tripathy, S. J Chua and J Arokiaraj, Comparative study of optical properties of nanoporous GaN prepared by UV-assisted electrochemical and electroless etching, 207th Electrochemical Society Meeting, Quebec, Canada, May , 2005

A. P. Vaipeyi, S. J Chua, S. Tripathy, Optimum annealing conditions for Erbium implanted GaN using micro Raman spectroscopy, in IVC-16 Conference held 28th June-2nd July 2004 in Venice, Italy.