Department of Electronicsand Electrical Engineering
The department had started this M.Tech. programme (Specialization: VLSI) from July 2006.
EE510 Semiconductor Device ModelingJunctions: equilibrium conditions, forward and reverse-biased junctions, reverse-bias breakdown, transient and a-c conditions, recombination and generation in the transition, semiconductor heterojunctions, Metal-semiconductor junctions: Schottky barriers, rectifying and Ohmic contacts, Bipolar junction transistors: minority carrier distribution and terminal currents, generalized biasing, switching, secondary effects, frequency limitations of transistors, heterojunction bipolar transistors, Field-Effect Transistors: JFET- current-voltage characteristics, effects in real devices, high-frequency and high-speed issues, Metal Insulator Semiconductor FET, MOSFET- basic operation and fabrication; ideal MOS capacitor; effects of real surfaces; threshold voltages; output and transfer characteristics of MOSFET, short channel and Narrow width effects, MOSFET scaling, Optoelectronics Devices: Light emitting diodes, Lasers, Photoconductors, Junction Photodiodes, Avalanche Photodiodes, Solar Cells, SPICE Models for Semiconductor Devices: MOSFET Level 1, Level 2 and level 3 model, Model parameters; SPICE models of p-n diode and BJT. Texts / References:
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EE 511 Semiconductor IC TechnologyCourse Contents: Historical perspective, processing overview, crystal growth, wafer fabrication and basic properties of Silicon Wafers, Clean Rooms, Wafer Cleaning, Epitaxy, Thermal Oxidation of Silicon, Lithography, Wet and Dry Etching, Thin film deposition, Diffusion, Ion Implantation, Metallization, Process Integration: Passive components, Bipolar Technology, MOSFET Technology, MESFET Technology, MEMS Technology, IC Manufacturing: Electrical Testing, Packaging, Yield, Future trends and Challenges: Challenges for integration, system on chip. Texts / References:
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EE 513 VLSI Lab ICourse Contents: Experiments are based on the following topics: Model Parameter extraction for a diode and MOSFET; NMOS and PMOS characteristics; Inverter characteristics; layout of resistors, capacitors, transistors and inverter; 1-bit Shift Register; digital logic cells; adders; multipliers; Ring Oscillator. Texts / References:
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EE 514 Digital IC DesignCourse Contents: Basic Electrical Properties of MOS circuits: MOS transistor operation in linear and saturated regions, MOS transistor threshold voltage, MOS switch and inverter, latch-up in CMOS inverter; sheet resistance and area capacitances of layers, wiring capacitances; CMOS inverter properties - robustness, dynamic performance, regenerative property, inverter delay times, switching power dissipation, MOSFET scaling - constant-voltage and constant-field scaling; dynamic CMOS design: steady-state behavior of dynamic gate circuits, noise considerations in dynamic design, charge sharing, cascading dynamic gates, domino logic, np-CMOS logic, problems in single- phase clocking, two-phase non-overlapping clocking scheme; subsystem design: design of arithmetic building blocks like adders – static, dynamic, Manchester carry-chain, look-ahead, linear and square-root carry-select, carry bypass and pipelined adders and multipliers - serial-parallel, Braun, Baugh-Wooley and systolic array multipliers, barrel and logarithmic shifters, area-time tradeoff, power consumption issues; designing semiconductor memory and array structures: memory core and memory peripheral circuitry. Texts / References:
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EE 6/7xx Elective I |
EE 6/7xx Elective II |
EE 512 Analog IC DesignCourse Contents: Introduction to analog VLSI and mixed signal issues in CMOS technologies; Basic MOS models, SPICE Models and frequency dependent parameters; Basic MNOS/CMOS gain stage, cascade and cascode circuits; Frequency response, stabilty and noise issues in amplifiers; CMOS analog blocks: Current Sources and Voltage references; Differential amplifier and OPAMP design; Frequency Synthesizers and Phased lock-loops; Non-linear analog blocks: comparators, charge-pump circuits and multipliers; Basics of data converters; Analog Testing and Layout issues; Low Voltage and Low Power Circuits; Introduction to RF Electronics. Texts / References:
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EE 515 VLSI System DesignCourse Contents: Basics of system hardware design: Hierarchical design using top-down and bottom-up methodology, System partitioning techniques, interfacing between system components, Handling multiple clock domains, Synchronous and asynchronous design styles; Design of finite state machines: state assignment strategies; The Processor: Data path and Control, Enhancing performance with Pipelining, exploiting of Memory hierarchy. Texts / References:
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EE 516 VLSI DSPCourse Contents: Introduction to DSP systems: Representation of DSP algorithms; Iteration Bound: Definition, Examples, Algorithms for computing Iteration bound; Pipelining and Parallel Processing: Definitions, Pipelining and parallel processing of FIR filters, Pipelining and parallel processing for low power; Retiming: Definitions and Properties, Solving system of Inequalities, Retiming techniques; Unfolding: Definition, An algorithm for unfolding, Applications of unfolding; Folding: Definition, Folding transformations, Register minimization techniques, Register minimization in folded architectures; Systolic Architecture Design: Introduction, Systolic array design methodology, FIR systolic arrays, Selection of scheduling vector, Matrix-Matrix multiplication and 2D systolic array design; CORDIC based Implementations: Architecture, Implementation of FIR filter and FFT algorithm; Bit-Level arithmetic architectures: Parallel multipliers, Bit-serial multipliers, Bit-Serial FIR filter design and Implementation; Redundant arithmetic: Redundant number representation, Carry-free radix-2 addition and subtraction, radix-2 hybrid redundant multiplication architectures; Low-power design: Theoretical background, Scaling versus power consumption, Power analysis, Power reduction techniques, Power estimation approaches. Texts / References:
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EE 517 VLSI Lab IICourse Contents: Experiments are based on the following topics: NMOS and PMOS characteristics; Common source amplifiers; Layout of resistors, capacitors, transistors; differential amplifier; cascode amplifier; current mirror; push pull CS amplifier; negative feedback amplifier; multistage amplifiers; operational amplifiers and comparators. Texts / References:
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EE 518 VLSI Lab IIICourse Contents: Experiments/Projects are based on the following topics: RF front-end: LNA, Mixer, VCO, Frequency Synthesizer, Power Amplifiers and Filters; ADCs, DACs and Digital Compensation techniques; base band designs: Filters, FFT, DCT, Channel coders and Decoders - Viterbi, Reed Solomon, Turbo Codes; Modulation, Synchronization and Timing Recovery Circuits; Image/Video compression techniques. Texts / References:
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EE 6/7xx Elective III |
EE 698 Project Phase-I |
EE 699 Project Phase-II |