Syllabus (Core): M.Tech

Semiconductor Device Modeling

Code: EE510 | L-T-P-C : 3-0-0

Junctions: equilibrium conditions, forward and reverse-biased junctions, reverse-bias breakdown, transient and a-c conditions, recombination and generation in the transition, semiconductor heterojunctions, Metal-semiconductor junctions: Schottky barriers, rectifying and Ohmic contacts, Bipolar junction transistors: minority carrier distribution and terminal currents, generalized biasing, switching, secondary effects, frequency limitations of transistors, heterojunction bipolar transistors, Field-Effect Transistors: JFET- current-voltage characteristics, effects in real devices, high-frequency and high-speed issues, Metal Insulator Semiconductor FET, MOSFET- basic operation and fabrication; ideal MOS capacitor; effects of real surfaces; threshold voltages; output and transfer characteristics of MOSFET, short channel and Narrow width effects, MOSFET scaling, Optoelectronics Devices: Light emitting diodes, Lasers, Photoconductors, Junction Photodiodes, Avalanche Photodiodes, Solar Cells, SPICE Models for Semiconductor Devices: MOSFET Level 1, Level 2 and level 3 model, Model parameters; SPICE models of p-n diode and BJT.

Texts / References:

1. B. G. Streetman and S. Banerjee, Solid State Electronic Devices, 6th Edition, PHI Private Limited, 2011.
2. P. Bhattacharya, Semiconductor Optoelectronics Devices, 2nd Edition, PHI, 2009.
3. G. Massobrio and P. Antognetti, Semiconductor Device Modeling with SPICE, 2nd Edition, TMH, 2010.
4. C. C. Hu, Modern Semiconductor Devices for Integrated Circuits, Pearson Education, 2010.
5. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd Edition, Wiley India, 2009.
6. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, Wiley India, 2010.
7. Y. Tsividis, Operation and Modeling of the MOS transistor, 2nd Edition, TMH, 1999.
8. S. A. Neamen and D. Biswas, Semiconductor Physics and Devices, 4th Edition, TMH, 2012.